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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856AWT1/D General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications. 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC BC856 -65 -80 -5.0 -100 BC857 -45 -50 -5.0 -100 BC858 -30 -30 -5.0 -100 Unit V V V mAdc COLLECTOR 3 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous 3 1 2 CASE 419-02, STYLE 3 SOT-323/SC-70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 - 55 to +150 Unit mW C/W C DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA) Collector - Emitter Breakdown Voltage (IC = -10 A, VEB = 0) Collector - Base Breakdown Voltage (IC = -10 mA) Emitter - Base Breakdown Voltage (IE = -1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO -65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -15 -4.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) 1. FR-5 = 1.0 x 0.75 x 0.062 in ICBO nA A Thermal Clad is a registered trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) -- -- VBE(sat) -- -- VBE(on) -0.6 -- -- -- -0.75 -0.82 -0.7 -0.9 -- -- V -- -- -0.3 -0.65 V hFE -- -- -- 125 220 420 90 150 270 180 290 520 -- -- -- 250 475 800 V -- (IC = -2.0 mA, VCE = -5.0 V) Collector - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 -- -- -- -- -- -- 4.5 10 MHz pF dB 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 BC857/BC858 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 Figure 1. Normalized DC Current Gain Figure 2. "Saturation" and "On" Voltages -2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C -1.6 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA -0.8 -0.4 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 4. Base-Emitter Temperature Coefficient 10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 BC856 -1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 0 -0.2 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.5 -50 -100 -200 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 Figure 7. DC Current Gain Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 VB, TEMPERATURE COEFFICIENT (mV/ C) -1.0 -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.4 -1.2 -1.8 VB for VBE -55C to 125C -0.8 -2.2 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -2.6 -3.0 -0.2 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25C C, CAPACITANCE (pF) 20 Cib 500 VCE = -5.0 V 200 100 50 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob 20 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 SINGLE PULSE 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -10 -5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) -2.0 -1.0 Figure 14. Active Region Safe Operating Area Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 INFORMATION FOR USING THE SOT-323/SC-70 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SOT-323/SC-70 SOT-323/SC-70 POWER DISSIPATION The power dissipation of the SOT-323/SC-70 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-323/SC-70 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-323/SC-70 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-323/SC-70 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 PACKAGE DIMENSIONS A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S 1 2 B V G D C 0.05 (0.002) RN K J DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 H CASE 419-02 ISSUE G SOT-323/SC-70 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data *BC856AWT1/D* BC856AWT1/D |
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